English to French Law/Patents Engineering (general) power semiconductor devices

The voltage blocking substrate may be a bi-directional voltage blocking layer and have a edge termination structure. In certain embodiments of the present invention, the voltage blocking substrate may be a boule grown substrate. Boule grown substrates are discussed in commonly assigned United States Patent Application Serial No. 10/686,795, filed October 16, 2003, entitled Methods ofForming Power Semiconductor Devices using Boule-Grown Silicon Carbide Drift Layers and Power Semiconductor Devices.

As is known to those of skill in the art, doped regions of silicon carbide may be formed through epitaxial growth and/or through implantation. For example, a p-type region of silicon carbide may be formed through epitaxial growth in the presence of a p-type dopant or through implantation of p-type dopants in an undoped, p-type or n-type epitaxial layer.